Temperature dependence of impurity levels in bulk semiconductors
The temperature dependence of impurity levels in semiconductors is a very interesting problem in the domain of deep levels impurities. Its evidence in experimental results is reported by many authors. However, the interpretation on theoretical basis requires sophisticated models. In this paper we pr...
| Main Author: | Amato, Angélica Amorim |
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| Format: | Artigo |
| Language: | English |
| Published: |
Sociedade Brasileira de Física
2017
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| Subjects: | |
| Online Access: |
http://repositorio.unb.br/handle/10482/26802 |
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| Summary: |
The temperature dependence of impurity levels in semiconductors is a very interesting problem in the domain of deep levels impurities. Its evidence in experimental results is reported by many authors. However, the interpretation on theoretical basis requires sophisticated models. In this paper we propose a very simple model that allows to extract the relevant parameters from the experiment without needing heavy computation. |
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