Cover Image

Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors

It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon d...

Full description

Main Author: Amato, Angélica Amorim
Format: Artigo
Language: English
Published: Sociedade Brasileira de Física 2017
Online Access: http://repositorio.unb.br/handle/10482/25956
Tags: Add Tag
No Tags, Be the first to tag this record!
id ir-10482-25956
recordtype dspace
spelling ir-10482-259562019-03-28T14:04:44Z Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors Amato, Angélica Amorim It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon density of states and that the absorption curve of a semiconductor is modulated by the phonon structure. 2017-12-07T04:37:06Z 2017-12-07T04:37:06Z 2002 Artigo Rev. Bras. Ensino Fís.,v.24,n.4,p.379-382,2002 1806-1117 http://repositorio.unb.br/handle/10482/25956 10.1590/S1806-11172002000400003 en Acesso Aberto application/pdf Sociedade Brasileira de Física http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1806-11172002000400003&lng=en&nrm=iso http://www.scielo.br/scielo.php?script=sci_abstract&pid=S1806-11172002000400003&lng=en&nrm=iso http://www.scielo.br/scielo.php?script=sci_pdf&pid=S1806-11172002000400003&lng=en&nrm=iso
institution REPOSITORIO UNB
collection REPOSITORIO UNB
language English
description It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon density of states and that the absorption curve of a semiconductor is modulated by the phonon structure.
format Artigo
author Amato, Angélica Amorim
spellingShingle Amato, Angélica Amorim
Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
author_sort Amato, Angélica Amorim
title Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
title_short Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
title_full Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
title_fullStr Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
title_full_unstemmed Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
title_sort light absorption near threshold with phonon participation for impurities in semiconductors
publisher Sociedade Brasileira de Física
publishDate 2017
url http://repositorio.unb.br/handle/10482/25956
_version_ 1641988520888238080
score 13.657419

Similar Items