Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon d...
| Main Author: | Amato, Angélica Amorim |
|---|---|
| Format: | Artigo |
| Language: | English |
| Published: |
Sociedade Brasileira de Física
2017
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| Online Access: |
http://repositorio.unb.br/handle/10482/25956 |
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